We investigate the hysteresis in the transfer characteristic of amorphous indium-gallium-zinc-oxide thin-film transistor by controlling the sweep waveform of the gate voltage (Vg) provided by parameter measure unit. It is conventionally studied by double sweeping Vg with the default setup of the source measure units, which speed may vary with the current level. By manipulating the step time of sweeping Vg, we found that the response time of charge traps or donor-like states is in the range that overlaps with the conventional time step in the measurement and must be considered.
The Electrochemical Society was founded in 1902 to advance the theory and practice at the forefront of electrochemical and solid state science and technology, and allied subjects.
ISSN: 2162-8750
SSL was launched in 2012 and was published until the end of 2015. It was dedicated to the rapid dissemination of peer-reviewed and concise research reports in fundamental and applied areas of solid-state science and technology. SSL is preserved as an archive.
Most read
Open all abstracts, in this tab
Yi-Jung Chen and Ya-Hsiang Tai 2015 ECS Solid State Lett. 4 Q10
Saiful Haque Misha et al 2015 ECS Solid State Lett. 4 P25
The switching uniformity and reliability of the TaOx based resistive random access memory (RRAM) device were investigated with varying nitrogen doping concentration. The nitrogen doped samples shows excellent electrical and reliability characteristics such as small switching variability for 3-bit multilevel per cell (MLC), low power operation and good retention properties. Compared with control sample, improved device characteristics of nitrogen doped device can be explained by nitrogen induced filament confinement.
Shiang Teng et al 2014 ECS Solid State Lett. 3 M25
Three-dimensional network structures with interconnected micro-channels were formed through the carbonization of three different varieties of wood. Performance of these carbonized woods was tested for their application as supercapacitor electrodes. From charge-discharge cycling in a KOH electrolyte solution, a maximum energy density of ∼45.6 Wh/kg (discharge current of 200 mA/g) and a maximum power density of ∼2000 W/kg (discharge current of 4000 mA/g) were obtained. The carbonized wood electrodes exhibited excellent cyclability, with 99.7% of the specific capacitance being retained after 2000 cycles. These remarkable results demonstrate the exciting potential for carbonized wood materials as inexpensive, high performance supercapacitor electrodes.
Woo Sik Yoo et al 2015 ECS Solid State Lett. 4 P91
Wafer geometry and residual stress go through significant changes at different points in the semiconductor manufacturing process flow. Precise wafer geometry measurement is very important to assess process induced wafer geometry change (PIWGC) and minimize pattern overlay in lithography steps of advanced node devices and 3-D (3-dimensional) packaged devices. However, the precise wafer geometry measurement is very difficult due to gravitational wafer sag and interaction between the anisotropy of mechanical properties of Si and wafer supporting configurations. Effects of anisotropy and supporting configuration on 300 mm Si (001) wafer profile measurements were investigated for pattern overlay estimation and process optimization.
Dan Yang et al 2013 ECS Solid State Lett. 2 R31
We found using UV-curable polymer (NOA63 from Norland Optics) film as a passivation layer, which was very simple and convenient to perform, could provide a temporary barrier for the organic light emitting devices (OLEDs). The NOA63 protective layer significantly restricted the moisture that penetrated into the OLEDs, but did not affect its luminescent characteristics. The decay time of device reaching 70% initial luminance was 1860 min, 6.8 folds longer than that of device without encapsulation. The effective water vapor transmission rate achieved 0.031 g/m2/day at 20°C and 50% relative humidity condition.
A. Castex et al 2013 ECS Solid State Lett. 2 P47
The formation of edge bonding voids during hydrophilic direct wafer bonding is investigated. These defects are linked to the bonding wave propagation and to fluid dynamics between the wafers. Fluid mechanics modeling shows that a gas pressure drop occurs at the wafer edge described by a Joule-Thomson expansion. This adiabatic process results in a gas temperature change which can lead to the condensation of small water droplets close to the wafer edge. Therefore, controlling the gas atmosphere during the bonding process is needed to avoid such bonding defects. Several solutions are proposed to avoid the formation of edge bonding voids.
Ah-Jin Cho et al 2014 ECS Solid State Lett. 3 Q67
Two-dimensional materials like graphene have great potential to excess the mobility limit of conventional silicon devices. Particularly, MoS2 FETs have high mobility and low off-current simultaneously due to their sizable band-gap. However, large hysteresis in its transfer curve is an obstacle for implementation to logic circuits and switching devices. Here, we report on a multi-layer MoS2 FET using atomic layer deposition Al2O3 as a gate insulator, showing small hysteresis of 0.86 V. It is thought that, such improvement in the hysteresis attributes to the small trap at the MoS2/Al2O3 interface, and it is confirmed through a constant current stress test.
Jiajia Tan and Ashutosh Tiwari 2012 ECS Solid State Lett. 1 Q57
Thin films of Li7La3Zr2O12 were deposited on SrTiO3 (100) and Sapphire (0001) substrates at room-temperature using a pulsed-laser-deposition technique. Detailed structural, compositional, optical, and electrochemical characterizations of the films were performed. The films deposited at room-temperature had amorphous structure, and exhibited a lithium-ion conductivity of 3.35 × 10−7 S/cm. The effects of thermal annealing and pulsed laser annealing on the properties of the films were investigated. Pulsed laser annealed films were found to have a superior lithium-ion conductivity value of 7.36 × 10−7 S/cm. Moreover, the Li7La3Zr2O12 films were found to be electrochemically stable against lithium metal.
Mai Phi Hung et al 2014 ECS Solid State Lett. 3 Q13
Double-sweeping gate voltage mode and positive gate pulse mode were used to investigate the mechanism of negative bias and illumination stress (NBIS) induced hysteresis in bottom-gate InGaZnO TFTs. Threshold voltages (Vth) in reverse measurement shifted positively and were well fitted to a stretched-exponential equation under various gate bias stress conditions. "Hump" effect appeared in the forward measurement and hysteresis gradually increased with stress time. The results indicate that trapped electrons at back interface, trapped holes at front interface and the generation of donor-like states in IGZO bulk channel were reasons for instability of IGZO TFTs under NBIS.
Suhyun Kim et al 2014 ECS Solid State Lett. 3 Q1
We have applied scanning moiré fringe (SMF) imaging to the quantitative measurement of the strain introduced in n-type channel transistors with embedded SiC in the source and drain. The tensile strain parallel to the channels was reveal with a nano-meter scale spatial resolution. We investigated the strain field in transistors with various channel lengths scaled down to 25 nm, and found that the strain increases up to 0.7% as the channel length shrinks to 35 nm. However, the strain in the channel decreases to 0. 55% as the channel length is scaled from 35 nm down to 25 nm.